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dc.contributor.authorBaimukhanov, Zein
dc.contributor.authorDauletbekova, Alma
dc.contributor.authorJunisbekova, Diana
dc.contributor.authorKalytka, Valeriy
dc.contributor.authorAkilbekov, Abdirash
dc.contributor.authorAkylbekova, Aiman
dc.contributor.authorBaubekova, Guldar
dc.contributor.authorBazarbek, Assyl-Dastan
dc.contributor.authorUsseinov, Abay
dc.contributor.authorPopov, Anatoli I.
dc.date.accessioned2025-01-07T17:42:18Z
dc.date.available2025-01-07T17:42:18Z
dc.date.issued2024
dc.identifier.issn1996-1944
dc.identifier.urihttps://www.mdpi.com/1996-1944/17/6/1226
dc.identifier.urihttps://dspace.lu.lv/dspace/handle/7/67195
dc.descriptionThis research was funded by the Ministry of Science and Higher Education of the Republic of Kazakhstan, grant number AP14871479 «Template synthesis and experimental-theoretical study of a new type of heterostructures for nano- and optoelectronic applications. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²en_US
dc.description.abstractElectrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2-NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions. © 2024 by the authors. --//-- This is an open-access article Baimukhanov, Z.; Dauletbekova, A.; Junisbekova, D.; Kalytka, V.; Akilbekov, A.; Akylbekova, A.; Baubekova, G.; Aralbayeva, G.; Bazarbek, A.-D.; Usseinov, A.; et al. Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates. Materials 2024, 17, 1226. https://doi.org/10.3390/ma17061226 published under CC BY 4.0 licence.en_US
dc.description.sponsorshipMinistry of Science and Higher Education of the Republic of Kazakhstan, grant project AP14871479; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²en_US
dc.language.isoengen_US
dc.publisherMDPIen_US
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/739508/EU/Centre of Advanced Material Research and Technology Transfer/CAMART²en_US
dc.relation.ispartofseriesMaterials;17 (6); 1226
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResearch Subject Categories::NATURAL SCIENCES::Physicsen_US
dc.subjectelectrochemical depositionen_US
dc.subjecthybrid DFT calculationsen_US
dc.subjectnanowiresen_US
dc.subjectoxide semiconductorsen_US
dc.subjectSiO2/Si track templateen_US
dc.subjecttrack technologiesen_US
dc.titleSynthesis of Orthorhombic Tin Dioxide Nanowires in Track Templatesen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.identifier.doi10.3390/ma17061226


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