Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics

Abstract

This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions, notably the 611 nm red emission, show thermal stability, retaining ∼90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability. © 2024 The Author(s) --//-- This is an open-access article Kuat K. Kumarbekov, Askhat B. Kakimov, Zhakyp T. Karipbayev, Murat T. Kassymzhanov, Mikhail G. Brik, Chong-geng Ma, Michał Piasecki, Yana Suchikova, Meldra Kemere, Marina Konuhova, Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics, Optical Materials: X, Volume 25, 2025, 100392, ISSN 2590-1478, https://doi.org/10.1016/j.omx.2024.100392.