Improvement of β-SiC Synthesis Technology on Silicon Substrate

Abstract

This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of SiC/por-Si/mono-Si. The surface morphology of the SiC film revealed islands measuring 2–6 μm in diameter, with detected micropores that were 70–80 nm in size. An XRD analysis confirmed the presence of spectra from crystalline silicon and crystalline silicon carbide in cubic symmetry. The observed shift in spectra to the low-frequency zone indicated the formation of nanostructures, correlating with our SEM analysis results. These research outcomes present prospects for the further utilization and optimization of β-SiC synthesis technology for electronic device development. --//-- This is an open-access article: Suchikova, Y.; Kovachov, S.; Bohdanov, I.; Kozlovskiy, A.L.; Zdorovets, M.V.; Popov, A.I. Improvement of β-SiC Synthesis Technology on Silicon Substrate. Technologies 2023, 11, 152. https://doi.org/10.3390/technologies11060152 published under the CC BY 4.0 licence.